型号:

SI5440DC-T1-GE3

RoHS:无铅 / 符合
制造商:Vishay Siliconix描述:MOSFET N-CH D-S 30V 1206-8
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
SI5440DC-T1-GE3 PDF
标准包装 1
系列 TrenchFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 6A
开态Rds(最大)@ Id, Vgs @ 25° C 19 毫欧 @ 9.1A,10V
Id 时的 Vgs(th)(最大) 2.5V @ 250µA
闸电荷(Qg) @ Vgs 29nC @ 10V
输入电容 (Ciss) @ Vds 1200pF @ 10V
功率 - 最大 6.3W
安装类型 表面贴装
封装/外壳 8-SMD,扁平引线
供应商设备封装 1206-8 ChipFET?
包装 标准包装
其它名称 SI5440DC-T1-GE3DKR
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